Aug 07, 2019
03:31 PM
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Aug 07, 2019
03:31 PM
1 Solution
Sep 04, 2019
12:22 AM
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Sep 04, 2019
12:22 AM
Hi Gyro Gearloose,
one main difference is the voltage range, where such devices are available. The main domain of CoolMOS is 650 V, with some parts up to 950 V. Contrary CoolSiC Mosfet can be designed also for much higher voltages.
The lower Qrr of CoolSiC Mosfet makes the suitable for halfbridge applications with hard switching, whereas the main domain of CoolMOS are single switch applications like PFC or soft-switched converters.
Best regards,
electricuwe
one main difference is the voltage range, where such devices are available. The main domain of CoolMOS is 650 V, with some parts up to 950 V. Contrary CoolSiC Mosfet can be designed also for much higher voltages.
The lower Qrr of CoolSiC Mosfet makes the suitable for halfbridge applications with hard switching, whereas the main domain of CoolMOS are single switch applications like PFC or soft-switched converters.
Best regards,
electricuwe
2 Replies
Aug 08, 2019
02:53 AM
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Aug 08, 2019
02:53 AM
Fast-switching devices like Si super-junction MOSFETs and CoolSiC™ MOSFET have many similar properties, e.g. temperature-independent switching losses, increase of Ron with temperature, etc.
Unlike the CoolMOS™ device, the CoolSiC™ MOSFET benefits from negligible Qrr and the very small Qoss
Application notes describing design measures to manage high switching speeds can also be used for CoolSiC™ MOSFETs.
Unlike the CoolMOS™ device, the CoolSiC™ MOSFET benefits from negligible Qrr and the very small Qoss
Application notes describing design measures to manage high switching speeds can also be used for CoolSiC™ MOSFETs.
Sep 04, 2019
12:22 AM
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Sep 04, 2019
12:22 AM
Hi Gyro Gearloose,
one main difference is the voltage range, where such devices are available. The main domain of CoolMOS is 650 V, with some parts up to 950 V. Contrary CoolSiC Mosfet can be designed also for much higher voltages.
The lower Qrr of CoolSiC Mosfet makes the suitable for halfbridge applications with hard switching, whereas the main domain of CoolMOS are single switch applications like PFC or soft-switched converters.
Best regards,
electricuwe
one main difference is the voltage range, where such devices are available. The main domain of CoolMOS is 650 V, with some parts up to 950 V. Contrary CoolSiC Mosfet can be designed also for much higher voltages.
The lower Qrr of CoolSiC Mosfet makes the suitable for halfbridge applications with hard switching, whereas the main domain of CoolMOS are single switch applications like PFC or soft-switched converters.
Best regards,
electricuwe