Aug 05, 2019
12:08 AM
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Aug 05, 2019
12:08 AM
1 Solution
Aug 05, 2019
01:15 AM
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Aug 05, 2019
01:15 AM
Yes, all CoolSiCTM MOSFET devices packaged in Infineon modules or Infineon’s discrete portfolio have a body diode integrated, which is released for operation. An additional Schottky diode is not required.
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Aug 05, 2019
01:15 AM
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Aug 05, 2019
01:15 AM
Yes, all CoolSiCTM MOSFET devices packaged in Infineon modules or Infineon’s discrete portfolio have a body diode integrated, which is released for operation. An additional Schottky diode is not required.
Sep 04, 2019
12:11 AM
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Sep 04, 2019
12:11 AM
Hi Melli,
for thermal design you should consider that this body is only conduction during deadtime. Hence the high forward voltage is no big issue. In a typical halfbridge configuration with standard gate signals, the will be conduction of the channel most of the time (synchronous rectification).
Best regards,
electricuwe
for thermal design you should consider that this body is only conduction during deadtime. Hence the high forward voltage is no big issue. In a typical halfbridge configuration with standard gate signals, the will be conduction of the channel most of the time (synchronous rectification).
Best regards,
electricuwe