Aug 01, 2019
06:37 AM
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Aug 01, 2019
06:37 AM
1 Solution
Aug 01, 2019
11:54 PM
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Aug 01, 2019
11:54 PM
Fränce wrote:
Which nomenclature does Infineon use for CoolSiC MOSFET devices?
For CoolSiC MOSFET Infineon uses a similar nomenclature as for IGBT modules. The main difference is that the RDSon is used instead of the nominal current in the device name following the initial letter combination indicating the module configuration or package type (discrete devices).
Example for modules: FF6MR12W2M1
FF: Half-bridge
6MR: 6 mOhm
12: rated maximum blocking voltage divided by 100
W2: Easy2B
M1: CoolSiC™ MOSFET 1st Generation
Example for discretes: IMW120R045M1
I: Infineon
M: CoolSiC™ MOSFET
W: TO247 3pin package
120: rated maximum blocking voltage divided by 10
R045: 45 mOhm
M1: CoolSiC™ MOSFET 1st Generation
Hope that helps you - further explanation, you will find on the www.infineon.com
3 Replies
Aug 01, 2019
11:54 PM
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Aug 01, 2019
11:54 PM
Fränce wrote:
Which nomenclature does Infineon use for CoolSiC MOSFET devices?
For CoolSiC MOSFET Infineon uses a similar nomenclature as for IGBT modules. The main difference is that the RDSon is used instead of the nominal current in the device name following the initial letter combination indicating the module configuration or package type (discrete devices).
Example for modules: FF6MR12W2M1
FF: Half-bridge
6MR: 6 mOhm
12: rated maximum blocking voltage divided by 100
W2: Easy2B
M1: CoolSiC™ MOSFET 1st Generation
Example for discretes: IMW120R045M1
I: Infineon
M: CoolSiC™ MOSFET
W: TO247 3pin package
120: rated maximum blocking voltage divided by 10
R045: 45 mOhm
M1: CoolSiC™ MOSFET 1st Generation
Hope that helps you - further explanation, you will find on the www.infineon.com
Aug 08, 2019
02:48 AM
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Aug 08, 2019
02:48 AM
One other example for discrete:
IMZ120R060M1H
I: Infineon
M: CoolSiC™ MOSFET
Z: TO247 4pin package
120: rated maximum blocking voltage divided by 10
R045: 45 mOhm
M1: CoolSiC™ MOSFET 1st Generation
H: High gate voltage ranges
IMZ120R060M1H
I: Infineon
M: CoolSiC™ MOSFET
Z: TO247 4pin package
120: rated maximum blocking voltage divided by 10
R045: 45 mOhm
M1: CoolSiC™ MOSFET 1st Generation
H: High gate voltage ranges
Aug 21, 2019
01:40 AM
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Aug 21, 2019
01:40 AM
Great. Thanks!