Infineon's Silicon Carbide MOSFET devices are called CoolSiC MOSFET.
CoolSiC MOSFET devices can reduce switching losses by about 80% and conduction losses by up to 50% compared to standard silicon based IGBTs, depending on the load conditions.
This leads to a significant reduction in operational costs, since inverter efficiency levels exceeding 99% can be achieved.
Because of the specific SiC properties, the same or even higher switching-frequency operations can be implemented.
This is particularly attractive for topologies operating under high switching frequencies, typically found in photovoltaic inverters, UPS, DC EV chargers and battery chargers used for energy storage.
In addition to this, the CoolSiC MOSFET devices enable engineers to reduce system costs by inreasing power density.
