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Thread: VGS IPP120N20NFD ID shorts

  1. #1
    New Member New Member BP101 is on a distinguished road
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    May 2019

    VGS IPP120N20NFD ID shorts

    Is +15 VGS to high voltage for this NFET? Why is Qg VGS=0-10v only test VDD=100v? Is 180ns dead band enough recovery time for FD diode in 20kHz PWM? How is it considered fast diode yet Trr-144ns recovery typical? What is typical dead band time for IPP120N20NFD? Odd issue since first testing IRFB4227PbF diode (Trr=100ns), datasheet shows shoot through blocking time (100ns). Assume that was gate drive dead band time (100ns) - never had DS short occur.

    A few NFET have shorted across DS during very random open loop commutation crash or random 1/2 bridge shoot through past dead band 100ns. Have not had another 1/2 bridge shoot through @180-200ns dead band time. Oddly reverse diode (IPP120N) Trr is slower 144-288ns MAX yet runs 40% cooler, a mind bending attribute. Does the Trr=288ns MAX infer to set dead band for worst case to 280ns? Will reducing VGS to +12v reduce Ton switch recovery transients?


    Starting low impedance BLDC (400mohm) phases, does not trip analog comparator fault - threshold (64A) peaks yet shorted DS junction twice in same location. The low side current monitor trip threshold (<2us) input to analog fault comparators. Oddly DS random short occurs, mostly high side NFET. The NFETS temperature <24*C monitored via two heat sink sensors. The IPP120N is producing higher than expected recovery transients VDD=139v recovery spike peaks <155v. Will lowering VGS=12v help to reduce these recovery spikes too?

    Many thanks!
    Last edited by BP101; May 22nd, 2019 at 09:10 AM.

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