infineon4engineers Facebook

infineon@google+ Google+

infineon@linkedin linkedin

infineon4engi@twitter twitter

infineon@youtube youtube

+ Reply to Thread
Results 1 to 2 of 2

Thread: VGS IPP120N20NFD ID shorts

  1. #1
    New Member New Member BP101 is on a distinguished road
    Join Date
    May 2019
    Posts
    2
    Points
    40

    VGS IPP120N20NFD ID shorts

    Is +15 VGS to high voltage for this NFET? Why is Qg VGS=0-10v only test VDD=100v? Is 180ns dead band enough recovery time for FD diode in 20kHz PWM? How is it considered fast diode yet Trr-144ns recovery typical? What is typical dead band time for IPP120N20NFD? Odd issue since first testing IRFB4227PbF diode (Trr=100ns), datasheet shows shoot through blocking time (100ns). Assume that was gate drive dead band time (100ns) - never had DS short occur.

    A few NFET have shorted across DS during very random open loop commutation crash or random 1/2 bridge shoot through past dead band 100ns. Have not had another 1/2 bridge shoot through @180-200ns dead band time. Oddly reverse diode (IPP120N) Trr is slower 144-288ns MAX yet runs 40% cooler, a mind bending attribute. Does the Trr=288ns MAX infer to set dead band for worst case to 280ns? Will reducing VGS to +12v reduce Ton switch recovery transients?

    Condition:

    Starting low impedance BLDC (400mohm) phases, does not trip analog comparator fault - threshold (64A) peaks yet shorted DS junction twice in same location. The low side current monitor trip threshold (<2us) input to analog fault comparators. Oddly DS random short occurs, mostly high side NFET. The NFETS temperature <24*C monitored via two heat sink sensors. The IPP120N is producing higher than expected recovery transients VDD=139v recovery spike peaks <155v. Will lowering VGS=12v help to reduce these recovery spikes too?

    Many thanks!
    Last edited by BP101; May 22nd, 2019 at 09:10 AM.

  2. #2
    New Member New Member BP101 is on a distinguished road
    Join Date
    May 2019
    Posts
    2
    Points
    40
    Simple questions about IPP120N datasheet testing VGS >+10v Infineon has no answers? Why Diagram 14 (QG) graph stop 10v when maximum VGS is 20v? QG is important to quantify gate drive resistance especially for parallel NFET's when >+10 VGS!

    The OPTIMOS-FD review PDF does not elaborate how 40% reduced Trr/Qrr may effect VGS drive voltages >+12v or diode recovery period. If Qrr is 40% reduced, why body diode has abnormally high recovery period compared to other Infineon NFET's, such as IRFB4227PbF tested in same 3 phase inverter circuit? The IPP120N is 10C cooler than IRFB42227PbF. Yet Trr body diode is faster and datasheet suggests (100ns dead time) typical - how is lower dead time possible via slower Qrr?

    1. Please review the IPP220N/25NFD datasheets to add VGS testing >+10v information?
    2. Please review how 40% improved Qrr why it requires larger dead time, >100ns?
    3. Please add solder temp/time per case leg/pin as easy to find info in datasheet.

+ Reply to Thread

Tags for this Thread

Disclaimer

All content and materials on this site are provided as is. Infineon makes no warranties or representations with regard to this content and these materials of any kind, whether express or implied, including without limitation, warranties or representations of merchantability, fitness for a particular purpose, title and non-infringement of any third party intellectual property right. No license, whether express or implied, is granted by Infineon. Use of the information on this site may require a license from a third party, or a license from Infineon.


Infineon accepts no liability for the content and materials on this site being accurate, complete or up- to-date or for the contents of external links. Infineon distances itself expressly from the contents of the linked pages, over the structure of which Infineon has no control.


Content on this site may contain or be subject to specific guidelines or limitations on use. All postings and use of the content on this site are subject to the Usage Terms of the site; third parties using this content agree to abide by any limitations or guidelines and to comply with the Usage Terms of this site. Infineon reserves the right to make corrections, deletions, modifications, enhancements, improvements and other changes to the content and materials, its products, programs and services at any time or to move or discontinue any content, products, programs, or services without notice.