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  1. #21
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    How does Enable pin work for safety function in the Driver IC?

    RST pin function equals Enable. (The IGBT is off if /RST = low).
    Last edited by circlejhx; Oct 24th, 2018 at 07:36 AM.

  2. #22
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    1ED-family: How can the DESAT function been adjusted for a MOSFET?

    Adjustment can be done by value of the DESAT resistor. The constant current source inside 1ED forces a voltage drop over the DESAT resistor, the DESAT diode and the power device itself, so that the DESAT triggers at the remaining voltage of V_MOSFET = V_DESAT – V_Ristor – V_Diode.

  3. #23
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    1ED-family: How do I design the protection diode D_prot at pin DESAT?

    The pin DESAT is not allowed to be forced (even by the junction capacitance of the DESAT diode) below GND2 in any case by more than -0.3V. The only way to achieve this is to use a small signal schottky diode (e.g. Infineon BAT165) between pin DESAT and pin GND. A normal silicon diode is not (!) sufficient.

  4. #24
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    Is the bootstrap diode able to work with a bootstrap capacitance of 10μF?

    Yes, 10 μF CBS is fine. We recommend not designing more than 100 μF for a bootstrap capacitor.

  5. #25
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    What value should the bootstrap capacitor for 6ED be set to?

    CBS=1.2*(IQBS*tP + QG)/△VBS
    IQBS: the quiescent current of the high-side section;
    tP: the switching period;
    QG: the total gate charge;
    △VBS: the voltage drop at the bootstrap capacitor within a switching period;
    Factor 1.2: An additional margin of 20% is added for the case of tolerances for the bootstrap capacitor.

  6. #26
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    What is the design rule for the pull-up resistor at terminal /FLT

    The pull-up resistor at terminal /FLT should be in the range of a few kΩ (e.g. 4.7 kΩ).

  7. #27
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    How can the deadtime be set to prevent shoot through for 6ED003L06-F2?

    For the optimum operation, it is necessary to check the transition time of the driven IGBT: the turn-on delay td(on), the rise time tr, the turn-off delay time td(off) and the fall time tf. Also the deadtime which is programmed from the control side should be larger than this value. If the control side does not offer any deadtime, the 6ED003L06-F2 generates a fixed deadtime between the individual IGBT of each half bridge as a safety feature, typically DT = 380 ns. Normally a deadtime of 1 μs to 1.5 μs is sufficient for most applications.

  8. #28
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    (1ED Compact) For the thermal resistance, can we also offer the value when there

    For this we supply the Psi-Value of Junction to Top which during design and evaluation can be used to calculate a junction temperature. Please refer to application note “Obtaining information about junction temperature by using the thermal coefficient".

  9. #29
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    For the UVLO, the VUVLOL2=11.2 V which is reference to GND2, when using bipolar p

    True, and this was never intended, since the driver does not know which voltage levels a customer uses. Btw, if a power supply fails it will most likely affect both positive and negative supply therefore it does not really matter where the UVLO becomes active. Also, there is no feedback to the controller so the application has to monitor the voltage on its own if required.

  10. #30
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    For the MOSFET version, the input suppression time is 40 ns, how to get longer fi

    Two solutions:
    1) use the IGBT version;
    2) place an RC-filter on the input.

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