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Thread: MOSFET Rdson simulation problem.

  1. #1
    New Member New Member levnemets is on a distinguished road
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    Aug 2017

    MOSFET Rdson simulation problem.

    We widely use simulation with Infineon MOSFET models as they are very accurate. We are using Simetrix/SIMPLIS simulator.
    But recently I found* a very strange behaviour of MOSFET Rdson at the simulation.
    As an example I used BSC028N06NS. If drain current is statics (DC), simulation perfectly match datasheet (see Fig1 and Fig2).
    But , if drain current changes, Rdson changes very much. Fig3 shows sinusoidal
    Current applied to MOSFET drain, while gate is kept at 12V DC voltage.
    As can be seen from this picture, at the beginning of the wave when current is
    small, Rdson is much higher than nominal value and it is dropping.
    At the top of sinusoidal wave Rdson stays relatively constant. When drain current
    starts dropping , Rdson drops and even becomes negative!
    Fig4 Shows Rdson behaviour for triangle shape of drain current
    Fig5 shows Rdson behaviour for triangle shape of drain current, but for much
    lower frequency. In this case Rdson changes is much less, than shown on Fig4.
    Could you, please explain this behaviour.
    ?????? ?????? Fig5.PNG‎   Fig1.PNG‎   Fig2.PNG‎   Fig3.PNG‎   Fig4.PNG‎  

  2. #2

    Infineon Employee
    Infineon Employee
    srhim1971 is on a distinguished road
    Join Date
    Sep 2016
    RDS on depends on a lot of factors,e.g. VGS,ID,Temperature,etc)
    For the simulation of the device we recommend to check the simulation parameters.

    See here:

    - Which model did you use? Refer to chapter 3.
    - The Simetix simulation parameters are described in chapter 6.1. Did you use these?
    - Which temperature did you use?

    You must make sure that the device is in the static region which is why you need to wait until the MOSFET is switched on before measuring.
    The views expressed here are my personal opinions, have not been reviewed or authorized by Infineon and do not necessarily represent the views of Infineon.

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