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Thread: Changing the gate turn on and off resistor to reduce the switching losses

  1. #1
    New Member New Member Gate_charger is on a distinguished road
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    Changing the gate turn on and off resistor to reduce the switching losses

    By how much I can change the gate turn on and off resistor to reduce the switching losses in my MOSFET and increase the efficiency of the PFC converter?

  2. #2

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    srhim1971 is on a distinguished road
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    reply to: changing the gate turn on and off resistor to reduce the switching losses

    Not only by changing the gate resistors is the efficiency affected, but also the drain to source peak voltage during turn off as well as the EMI behavior of the converter. This is a very iterative procedure. The gate resistor can be change as much as the efficiency is good enough, the drain-to-source voltage spike during turn off do not exceeds 80% of the MOSFET breakdown voltage during normal operation (according to IPC-9592) and the EMI performance does not exceed the Class A or B (according to the specified application case)* limits of conducted emissions.
    The views expressed here are my personal opinions, have not been reviewed or authorized by Infineon and do not necessarily represent the views of Infineon.

  3. #3
    New Member New Member IfxDesigner is on a distinguished road
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    Just play with the gate resistor R1 of this simple MOSFET inverted buck circuit to explore the overall conduction & switching losses
    1) click on "Simulate Transient"
    2) change R1 to a higher value and simulate again
    3) In the Diagram window select View -> Overlay diagram to merge all results
    4) compare the power loss of the MOSFET with Process -> Averages

    More interesting online simulation examples you can explore on the Infineon Designer landing page.

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