infineon4engi@twitter twitter

infineon4engineers Facebook

infineon@linkedin linkedin

infineon@youtube youtube

+ Reply to Thread
Results 1 to 2 of 2
  1. #1
    Beginner Beginner mosfetking is on a distinguished road
    Join Date
    Feb 2017

    Avalanche capability of CoolMOS

    What is the Avalanche capability of CoolMOS devices?

  2. #2

    Infineon Employee
    Infineon Employee
    Occam is on a distinguished road
    Join Date
    Mar 2017
    The maximum allowed energy that can be dissipated in the device during a single avalanche operation (i.e. during turn off of an unclamped inductive load) at IAR and at a starting temperature of 25C. Some manufacturers refer to EAS as the energy resulting in the maximum allowed junction temperature. (For CoolMOS™ however, EAS is not back-calculated from TJ,max but rather determined from characterization results together with simulation results.)

    Click image for larger version

Name:	Avalanche capability of CoolMOS devices.PNG
Views:	3
Size:	13.8 KB
ID:	2880
    An avalanche test can be carried out on a simple unclamped inductive load switching circuit as shown in this figure. A voltage pulse is applied to the gate to turn the MOSFET on and allow the load current to ramp up according to the inductor L and the drain supply voltage VDD. When the Mosfet is turned off, the current in the inductor continues to flow and causes the voltage across the MOSFET to rise sharply. The resulting over-voltage is clamped at the breakdown voltage VBR and remains at VBR until the load current reaches zero. Breakdown happens once the critical electric field is reached at some point in the device. The breakdown mechanism itself is not destructive for a MOSFET but heat caused by the large breakdown current can be destructive. Hence, the limiting factor for the maximum allowed EAS is the maximum temperature resulting from an avalanche event.
    The views expressed here are my personal opinions, have not been reviewed or authorized by Infineon and do not necessarily represent the views of Infineon.


All content and materials on this site are provided as is. Infineon makes no warranties or representations with regard to this content and these materials of any kind, whether express or implied, including without limitation, warranties or representations of merchantability, fitness for a particular purpose, title and non-infringement of any third party intellectual property right. No license, whether express or implied, is granted by Infineon. Use of the information on this site may require a license from a third party, or a license from Infineon.

Infineon accepts no liability for the content and materials on this site being accurate, complete or up- to-date or for the contents of external links. Infineon distances itself expressly from the contents of the linked pages, over the structure of which Infineon has no control.

Content on this site may contain or be subject to specific guidelines or limitations on use. All postings and use of the content on this site are subject to the Usage Terms of the site; third parties using this content agree to abide by any limitations or guidelines and to comply with the Usage Terms of this site. Infineon reserves the right to make corrections, deletions, modifications, enhancements, improvements and other changes to the content and materials, its products, programs and services at any time or to move or discontinue any content, products, programs, or services without notice.