## Characterization of MOSFETs vs IGBTs

Hello,

The switching parameters of IGBTs are characterized by a double-pulse test with an inductive load. The switching times (Tdon, Tr, Tdoff and Tf) are defined in relation with the collector current (Ice).
For the MOSFETs (such as SiC MOSFETs), a resistive load is used for the test. The switching times are defined in relation with the drain source voltage (Vds).

My questions are:
Why do we prefer an inductive load for IGBTs? Why the switching times are not measured in relation with the collector voltage (Vce) ?
Why do we always use a resitive load for SiC MOSFET? Can the switching times be defined by the drain current (Ids) or they need to be defined by the drain voltage (Vds) ?

For the context: I need to determine the minimum dead time for two power converters, one made of SiC MOSFETs and the second one made of IGBTs.