Feb 26, 2020
03:54 AM
- Mark as New
- Bookmark
- Subscribe
- Mute
- Subscribe to RSS Feed
- Permalink
- Report Inappropriate Content
Feb 26, 2020
03:54 AM
Hi guys, quick question, why would it be advantageous to lower IGBT gate voltage in short circuit mode?
Thanks!
Thanks!
Solved! Go to Solution.
- Tags:
- IFX
1 Solution
Mar 13, 2020
06:19 AM
- Mark as New
- Bookmark
- Subscribe
- Mute
- Subscribe to RSS Feed
- Permalink
- Report Inappropriate Content
Mar 13, 2020
06:19 AM
Hello,
The IGBT destruction due to short circuit conditions is mainly due to high power dissipation that generates high temperatures damaging the IGBT. Hence, the IGBT performance under short circuit conditions can be improved reducing the power dissipation, e.g. reducing the IGBT current.
Also, the maximum IC collector current during short circuit conditions (i.e. IGBT saturation current) depends on the transconductance (Gfs) of the IGBT.
In the typical transfer characteristic chart, commonly shown in every IGBT datasheet where the slope of this curve is the transconductance of the IGBT, it is clear that maximum IC collector current decreases as a function of gate voltage decrease.
Therefore, reducing IGBT gate voltage improves the performance under short circuit conditions.
Thank you
The IGBT destruction due to short circuit conditions is mainly due to high power dissipation that generates high temperatures damaging the IGBT. Hence, the IGBT performance under short circuit conditions can be improved reducing the power dissipation, e.g. reducing the IGBT current.
Also, the maximum IC collector current during short circuit conditions (i.e. IGBT saturation current) depends on the transconductance (Gfs) of the IGBT.
In the typical transfer characteristic chart, commonly shown in every IGBT datasheet where the slope of this curve is the transconductance of the IGBT, it is clear that maximum IC collector current decreases as a function of gate voltage decrease.
Therefore, reducing IGBT gate voltage improves the performance under short circuit conditions.
Thank you
1 Reply
Mar 13, 2020
06:19 AM
- Mark as New
- Bookmark
- Subscribe
- Mute
- Subscribe to RSS Feed
- Permalink
- Report Inappropriate Content
Mar 13, 2020
06:19 AM
Hello,
The IGBT destruction due to short circuit conditions is mainly due to high power dissipation that generates high temperatures damaging the IGBT. Hence, the IGBT performance under short circuit conditions can be improved reducing the power dissipation, e.g. reducing the IGBT current.
Also, the maximum IC collector current during short circuit conditions (i.e. IGBT saturation current) depends on the transconductance (Gfs) of the IGBT.
In the typical transfer characteristic chart, commonly shown in every IGBT datasheet where the slope of this curve is the transconductance of the IGBT, it is clear that maximum IC collector current decreases as a function of gate voltage decrease.
Therefore, reducing IGBT gate voltage improves the performance under short circuit conditions.
Thank you
The IGBT destruction due to short circuit conditions is mainly due to high power dissipation that generates high temperatures damaging the IGBT. Hence, the IGBT performance under short circuit conditions can be improved reducing the power dissipation, e.g. reducing the IGBT current.
Also, the maximum IC collector current during short circuit conditions (i.e. IGBT saturation current) depends on the transconductance (Gfs) of the IGBT.
In the typical transfer characteristic chart, commonly shown in every IGBT datasheet where the slope of this curve is the transconductance of the IGBT, it is clear that maximum IC collector current decreases as a function of gate voltage decrease.
Therefore, reducing IGBT gate voltage improves the performance under short circuit conditions.
Thank you