Nov 14, 2019
12:15 AM
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Nov 14, 2019
12:15 AM
Hi guys,
What are the main things to consider when designing a PCB for SiC MOSFETs?
Thanks.
What are the main things to consider when designing a PCB for SiC MOSFETs?
Thanks.
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Nov 14, 2019
11:42 PM
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Nov 14, 2019
11:42 PM
For the PCB layout, general things to consider are...
1. Gate source and power source tracks must be separated to avoid the noise interference to the gate signal.
2. Power source and drain tracks are designed as short as possible.
3. Gate resistors and gate driver IC should be placed close to their corresponding MOSFETs
Detailed information can also be found in the application note link below.
https://www.infineon.com/dgdl/Infineon-Introduction_to_CoolSiC_1200V_SiC_MOSFET-ApplicationNotes-v01...
1. Gate source and power source tracks must be separated to avoid the noise interference to the gate signal.
2. Power source and drain tracks are designed as short as possible.
3. Gate resistors and gate driver IC should be placed close to their corresponding MOSFETs
Detailed information can also be found in the application note link below.
https://www.infineon.com/dgdl/Infineon-Introduction_to_CoolSiC_1200V_SiC_MOSFET-ApplicationNotes-v01...
2 Replies
Nov 14, 2019
11:27 PM
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Nov 14, 2019
11:27 PM
The key is to consider that the devices can switch up to 10 x faster in regard to di/dt than Si devices. Hence keeping stray inductance low is essential in DC-link as well as in gate connection:
Best is to work with wide tracks, keeping the return path on an adjacent layer of the PCB. I can provide more details, if you specify the device you are using.
Best is to work with wide tracks, keeping the return path on an adjacent layer of the PCB. I can provide more details, if you specify the device you are using.
Nov 14, 2019
11:42 PM
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Nov 14, 2019
11:42 PM
For the PCB layout, general things to consider are...
1. Gate source and power source tracks must be separated to avoid the noise interference to the gate signal.
2. Power source and drain tracks are designed as short as possible.
3. Gate resistors and gate driver IC should be placed close to their corresponding MOSFETs
Detailed information can also be found in the application note link below.
https://www.infineon.com/dgdl/Infineon-Introduction_to_CoolSiC_1200V_SiC_MOSFET-ApplicationNotes-v01...
1. Gate source and power source tracks must be separated to avoid the noise interference to the gate signal.
2. Power source and drain tracks are designed as short as possible.
3. Gate resistors and gate driver IC should be placed close to their corresponding MOSFETs
Detailed information can also be found in the application note link below.
https://www.infineon.com/dgdl/Infineon-Introduction_to_CoolSiC_1200V_SiC_MOSFET-ApplicationNotes-v01...