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Thread: dv/dt for an SiC MOSFET

  1. #1
    Beginner Beginner Max Power is on a distinguished road
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    dv/dt for an SiC MOSFET

    Dears,
    another question from my side:
    What is the maximum dv/dt for an SiC MOSFET turn-on and turn-off? How is it affected by current and temperature?
    Thanks for you help
    Max P.

  2. #2
    Beginner Beginner Fränce is on a distinguished road
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    Hi there,

    actually I have a question going into the same direction.
    So, I understood that sic will be less expensive on the system side, but what about EMI filters?
    Will the fast di/dt & dv/dt lead to more expensive EMI filter?

    Have a great evening,
    Fränce

  3. #3

    Infineon Employee
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    electricuwe is on a distinguished road
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    Hi Max Power, hi Fränce,

    dV/dt of SiC Mosfets can be quite high, up to 100 kV/us, for our CoolSiC Mosfet dV/dt can be controlled quite well via the gate resistor.
    Compared to IGBTs with Si FWD there is a benefit that there is no steep increase in dV/dt when turning on low currents
    dV/dt at turn-off increases with drain current as the current has to charge the output capacitance

    In regard to EMI you have to distinguish between dV/dt related noise (usually conducted EMI) and diode recovery related (di/dt of reverse recovery current) noise (usually radiated EMI)

    The first will be worse compared to IGBTs, if higher dV/dt is adjusted, the later is expected to improve as the CoolSiC body diode has much better recovery behaviour than a silicon diode.

    It is worthwhile to note that you can have benefits in losses, even if you do not adjust higher dV/dt as for IGBTs.

    Best regards,
    electricuwe
    The views expressed here are my personal opinions, have not been reviewed or authorized by Infineon and do not necessarily represent the views of Infineon.

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