What is the SiC diodes robustness during fast commutation without co-pack diode?

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User17640
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As the title says, Id like to know more about the sic diodes robustness during fast commutation.
Do you maybe have any documentation or papers i can find more info about this?
Thanks in advance!
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YUAN
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Do you mean SiC Schottky diode or the body diode of SiC MOSFET?

Both of diode have no constrains regarding fast switching.

View solution in original post

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YUAN
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Do you mean SiC Schottky diode or the body diode of SiC MOSFET?
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YUAN
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First like received 10 replies posted 5 solutions authored
Do you mean SiC Schottky diode or the body diode of SiC MOSFET?

Both of diode have no constrains regarding fast switching.
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User17640
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Hi Yuan, thanks for your respond. My question was aiming for the body diode of the sic mosfet.
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YUAN
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Yes, the body diode is fully verified with fast switching. We have reached to even 200V/ns, the diode has not problem.
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Andreas_Zhao
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YUAN wrote:
Yes, the body diode is fully verified with fast switching. We have reached to even 200V/ns, the diode has not problem.

thanks for comments, Yuan. Do fast switching mean body diode can be counterpart for hard current commutation ? no synchronic mode needed for customer control design ?
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electricuwe
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Hi Zhao,

hard commutation and use of synchronous rectification are topics that are not directly related.

The body diode of our CoolSiC-Mosfet is suitable for hard commutation, because it is a SiC-diode (contrary to body diodes of HV-Silicon Mosfets)

It is recommended to apply synchronous rectification, because the forward voltage drop of the body diode is quite high. But the effort to implement synchronous rectification is very low. Any standard PWM pulse pattern applied to a halfbridge configurations will provide synchronous rectification anyhow. The body diode (instead of the Mosfet channel) will only conduct during deadtime or when very high currents are applied. Hence for optimum benefit of synchronous rectification it is recommended to minimize deadtime.
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