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Thread: What is the SiC diodes robustness during fast commutation without co-pack diode?

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    Beginner Beginner Max Power is on a distinguished road
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    What is the SiC diodes robustness during fast commutation without co-pack diode?

    As the title says, Id like to know more about the sic diodes robustness during fast commutation.
    Do you maybe have any documentation or papers i can find more info about this?
    Thanks in advance!

  2. #2

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    Do you mean SiC Schottky diode or the body diode of SiC MOSFET?

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    Do you mean SiC Schottky diode or the body diode of SiC MOSFET?

    Both of diode have no constrains regarding fast switching.

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    Hi Yuan, thanks for your respond. My question was aiming for the body diode of the sic mosfet.

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    Yes, the body diode is fully verified with fast switching. We have reached to even 200V/ns, the diode has not problem.
    The views expressed here are my personal opinions, have not been reviewed or authorized by Infineon and do not necessarily represent the views of Infineon.

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    Quote Originally Posted by YUAN View Post
    Yes, the body diode is fully verified with fast switching. We have reached to even 200V/ns, the diode has not problem.
    thanks for comments, Yuan. Do fast switching mean body diode can be counterpart for hard current commutation ? no synchronic mode needed for customer control design ?
    The views expressed here are my personal opinions, have not been reviewed or authorized by Infineon and do not necessarily represent the views of Infineon.

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    Hi Zhao,

    hard commutation and use of synchronous rectification are topics that are not directly related.

    The body diode of our CoolSiC-Mosfet is suitable for hard commutation, because it is a SiC-diode (contrary to body diodes of HV-Silicon Mosfets)

    It is recommended to apply synchronous rectification, because the forward voltage drop of the body diode is quite high. But the effort to implement synchronous rectification is very low. Any standard PWM pulse pattern applied to a halfbridge configurations will provide synchronous rectification anyhow. The body diode (instead of the Mosfet channel) will only conduct during deadtime or when very high currents are applied. Hence for optimum benefit of synchronous rectification it is recommended to minimize deadtime.
    The views expressed here are my personal opinions, have not been reviewed or authorized by Infineon and do not necessarily represent the views of Infineon.

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