infineon4engi@twitter infineon@linkedin infineon4engineers infineon@youtube
twitter Facebook Linkedin Youtube

+ Reply to Thread
Results 1 to 2 of 2

Thread: The Suitable Model of Field-Effect Transistor

  1. #1
    New Member New Member Leonardori is on a distinguished road
    Join Date
    Jul 2016

    The Suitable Model of Field-Effect Transistor

    Good day~ all

    I am recently learn knowledge about field-effect transistor, and as we all known, field effect transistor (FET) is abridged as field impact transistor. For the most part, transistors are conductive by two sorts of polar bearers, for example most bearers and a couple of negative transporters. Consequently, they are called bipolar transistors, while FET is conductive just by generally bearers. It is inverse to bipolar transistors, it is additionally called unipolar transistors.

    And now I'm writing an electronics circuit simulator and I need a very simple and straightforward model for a field-effect transistor (as simple as the Ebers-Moll model for a BJT). I can use resistors, voltage sources, current sources, diodes, (I can also use a resistor with a very large resistance to measure the gate-source voltage).

    What model would you suggest?


  2. #2
    Beginner Beginner
    Infineon Employee
    Infineon Employee
    dpinto is on a distinguished road
    Join Date
    Apr 2020
    We have an older application note which you may find useful. It has simplified model

    Please take a look at this.
    The views expressed here are my personal opinions, have not been reviewed or authorized by Infineon and do not necessarily represent the views of Infineon.

+ Reply to Thread

Tags for this Thread


All content and materials on this site are provided “as is“. Infineon makes no warranties or representations with regard to this content and these materials of any kind, whether express or implied, including without limitation, warranties or representations of merchantability, fitness for a particular purpose, title and non-infringement of any third party intellectual property right. No license, whether express or implied, is granted by Infineon. Use of the information on this site may require a license from a third party, or a license from Infineon.

Infineon accepts no liability for the content and materials on this site being accurate, complete or up- to-date or for the contents of external links. Infineon distances itself expressly from the contents of the linked pages, over the structure of which Infineon has no control.

Content on this site may contain or be subject to specific guidelines or limitations on use. All postings and use of the content on this site are subject to the Usage Terms of the site; third parties using this content agree to abide by any limitations or guidelines and to comply with the Usage Terms of this site. Infineon reserves the right to make corrections, deletions, modifications, enhancements, improvements and other changes to the content and materials, its products, programs and services at any time or to move or discontinue any content, products, programs, or services without notice.