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Type: Posts; User: YUAN

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  1. Yes, the body diode is fully verified with fast...

    Yes, the body diode is fully verified with fast switching. We have reached to even 200V/ns, the diode has not problem.
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    1,234

    It is very difficult to directly link the mohm...

    It is very difficult to directly link the mohm rating to Ic rating in the application. Because Ic rating is coming from only conduction loss, there is no switching loss involved. If an application is...
  3. Most of the failure mechanism is the same as Si...

    Most of the failure mechanism is the same as Si based technology. However, the gate oxide (GOX) reliability is the very special reliability topic for SiC MOSFET. Infineon has spend a lot of effort to...
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    9,636

    Here is the answer: 4118 4119

    Here is the answer:

    4118
    4119
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    3
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    300

    Really depending on you application, we see the...

    Really depending on you application, we see the use from 8kHz to 150kHz.
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    170

    What is the low power solar meaning for you? We...

    What is the low power solar meaning for you? We do see a lot of benefit in string inverter of using SiC.
  7. Do you mean SiC Schottky diode or the body diode...

    Do you mean SiC Schottky diode or the body diode of SiC MOSFET?

    Both of diode have no constrains regarding fast switching.
  8. Do you mean SiC Schottky diode or the body diode...

    Do you mean SiC Schottky diode or the body diode of SiC MOSFET?
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    118

    Generally, SiC will fit for the applications...

    Generally, SiC will fit for the applications require high voltage and high switching frequency, e.g. SiC MOSFET for EV charge DC/DC stage, SiC diode for solar boost stage...

    Also, due to the...
  10. Thread: threshold voltage

    by YUAN
    Replies
    1
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    83

    There will always be some gate voltage coupled...

    There will always be some gate voltage coupled from external. SiC MOSFET may have more gate voltage coupled, due to the fast switching. If the couple gate voltage is higher than the threshold...
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    2,020

    I believe you are asking the gate voltage window....

    I believe you are asking the gate voltage window.

    For the gate voltage, please follow the application note. 0V is recommend for the discrete devices.
    ...
  12. Thread: Snubber needed?

    by YUAN
    Replies
    2
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    182

    For Infineon SiC MOSFET, snubber is not needed....

    For Infineon SiC MOSFET, snubber is not needed. To control the speed of the SiC MOSFET, only use the gate resistor is preferred.
  13. Thread: Nomenclature

    by YUAN
    Replies
    3
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    221

    One other example for discrete: IMZ120R060M1H...

    One other example for discrete:

    IMZ120R060M1H
    I: Infineon
    M: CoolSiC™ MOSFET
    Z: TO247 4pin package
    120: rated maximum blocking voltage divided by 10
    R045: 45 mOhm
    M1: CoolSiC™ MOSFET 1st...
Results 1 to 13 of 13
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