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  1. Dear Dominik, yes, using complementary bipolar...

    Dear Dominik,

    yes, using complementary bipolar transistors in emitter follower configuration is one option. Look for types with specified current gain at high current and high transit frequency....
  2. Dear Dominik, in general the operation at...

    Dear Dominik,

    in general the operation at several 100 kHz under ZVS condition is feasible with this module.

    You have to do separate power loss and junction temperature calculations for the...
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    Hello Gabriel, to understand this application...

    Hello Gabriel,

    to understand this application an device background is needed.

    The main application of IGBT are inverters consisting of halfbridges for drives or for feeding renewable energy...
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    This application bears three main challenges, two...

    This application bears three main challenges, two technical ones and one on the commercial side.

    Technical:
    - You always need a freewheeling path when turning off current. This can be a diode,...
  5. We have used Bumblebee probes from PMK and IsoVu...

    We have used Bumblebee probes from PMK and IsoVu from Tektronix for measurement of highside gate signals. Highside drain source voltage measurement is less critical in regard to CMRR and could be...
  6. Hi Ruan, my recommendation is to look for...

    Hi Ruan,

    my recommendation is to look for another power device first. The body diode of HV Si-Mosfets generally has very poor reverse recovery behaviour. But his is mandatory for any application...
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    View Post

    Hi Fränce, sorry for the delay in answering due to holidays season

    yes, it is possible to calculate lifetime in such an application. Under the Assumtion that our recommendations for gate drive...
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    Depending on the target/ the level of you...

    Depending on the target/ the level of you simulation, different simulation tools and models apply.


    For the chip used in the modules currently available, you can use the model provided on the...
  9. Replies
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    1,323

    Hi Melli, using SiC in low power applications...

    Hi Melli,

    using SiC in low power applications can enable to move from forced cooling to natural cooling due to lower losses. As the fan is not only expensive, but also limited in lifetime and...
  10. There is no simple answer to this question. The...

    There is no simple answer to this question. The optimum solution depends on the current range and if you are considering a dedicated device characterization board or a measurement within an existing...
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    The answer to this is very simple: because their...

    The answer to this is very simple: because their diode is not free of drift...
  12. Replies
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    854

    The key is to consider that the devices can...

    The key is to consider that the devices can switch up to 10 x faster in regard to di/dt than Si devices. Hence keeping stray inductance low is essential in DC-link as well as in gate connection:
    ...
  13. Hi AnniLe, at first please note that SC...

    Hi AnniLe,

    at first please note that SC withstand time is rated differently for Discrete and module. Discrete devices are specified with 3 us, modules with 2 us. However, SC protection can be...
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    1,793

    Hi, the accurate timing is especially...

    Hi,

    the accurate timing is especially important when you are using high switching frequencies. If there are to large tolerances in timing this will require large deadtime/interlock delay time,...
  15. You should consider that SiC switches up to 10x...

    You should consider that SiC switches up to 10x faster than silicon. Hence dV/dt of 100 kV/us is not unusual. Hence it is important to chose drives and driver power supplies with very low coupling...
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    We have provided two pairs of gate sources pins...

    We have provided two pairs of gate sources pins to minimize gate circuit inductance.

    For optimum driving place the driver in the center in between the the two sets of control pins and provide...
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    1,159

    Dear Gyro, when switching SiC-Mosfets with a...

    Dear Gyro,

    when switching SiC-Mosfets with a strong driver, a low gate resistor value and low additional parasitic capacitance dV/dt values of 50..100 kV/us can be reached. This is good to...
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    When considering the use of SiC in drives, you...

    When considering the use of SiC in drives, you have a clear target in mind.

    Usually an increase of switching frequency (compared to today's drives using IGBTs) will not provide a benefit. Motor...
  19. Hi Zhao, hard commutation and use of...

    Hi Zhao,

    hard commutation and use of synchronous rectification are topics that are not directly related.

    The body diode of our CoolSiC-Mosfet is suitable for hard commutation, because it is a...
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    Hi Walter, yes, we do have such plans. 650 V...

    Hi Walter,

    yes, we do have such plans. 650 V will follow as Discrete part and 1700 V in 62mm and XHP. In case you have a concrete project please ask for schedule ans samples via your sales...
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    Also for the Easy modules 0 V can be used in case...

    Also for the Easy modules 0 V can be used in case simplicity of the design has priority vs. switching speed. With a higher turn-on gate resistor the dV/dt can be reduced to a level that also modules...
  22. Hi AnniLe, some details on SC (e.g. example...

    Hi AnniLe,

    some details on SC (e.g. example waveform) you can find in the following Application note:
    ...
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    View Post

    Hi Max Power, hi Fränce,

    dV/dt of SiC Mosfets can be quite high, up to 100 kV/us, for our CoolSiC Mosfet dV/dt can be controlled quite well via the gate resistor.
    Compared to IGBTs with Si FWD...
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    Hi Gyro Gearloose, one main difference is the...

    Hi Gyro Gearloose,

    one main difference is the voltage range, where such devices are available. The main domain of CoolMOS is 650 V, with some parts up to 950 V. Contrary CoolSiC Mosfet can be...
  25. Thread: Body Diode

    by electricuwe
    Replies
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    1,196

    Hi Melli, for thermal design you should...

    Hi Melli,

    for thermal design you should consider that this body is only conduction during deadtime. Hence the high forward voltage is no big issue. In a typical halfbridge configuration with...
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