IGBT Forum Discussions
芯片镀金分溅镀和化镀吗?两个区别是在什么地方?
正金AlCu、AlSiCu、AlSi各有什么本质上的区别和作用?键合工艺需要考虑哪些问题?
背金TiNiAg/AlTiNiAg各有什么本质上的区别和作用?焊接工艺需要考虑哪些问题?
CH1:Vge of U-L CH2:Vce of U-L CH3:Vge of U-H CH4:Vce of U-H
Hello engineers, I have a couple questions for you. We are using IR2214SS to drive FS35R12W1T7, referencing the EVAL-M1-IR2214 DEMO board.
1, Vge up and down the dead zone of the tube is 2.68us, from the figure between CH1 and CH3 can be seen, but Vce up and down the dead zone of the tube is only 7ns, almost equal to none, from the figure between CH2 and CH4 can be seen. Normally speaking, the deadband between the upper and lower Vce should be the same as the deadband between the upper and lower Vge, but through a lot of tests, it is found that there is almost no deadband between the Vce of IGBT. Is this a characteristic of the IGBT itself, or what, please answer.
2, from the figure CH1 and CH2 can be found, U-L's Vge off, need to wait 2.98us after U-L's Vce will turn on, such a long delay is what causes, Vge off after Vce should not be very soon conductive. U-L's Vge has not yet been turned on, U-L's Vce will be 1.43us ahead of the turn off, Vge has not yet been acted on, Vce turned off ahead of the turn off. What is the reason for this, please pick up the answer.
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Show Less求一份英飞凌IGBT所有模块的介绍说明书,包括哪些电压电流等级,主要是原理图,有关针脚排列的电路图?
I would like to ask the immersion cooling of the IGBT. Are the material of the IGBT compatible with the dielectric fluid? I know the silicon gel is not compatible with the fluid, but how about the other materials like the chips and the solder layers or materials I don't know ?
Thanks.
Show LessWhat is the relationship between the magnitude of the IGBT turn-off voltage (e.g. -9V vs. -15V) and the turn-off time, turn-off voltage spike, and losses?
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Show Lesssmartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/IGBT/IPOSIM/td-p/712264
Show LessQuestion: Taking Infineon IKW25T120 as an example, what conditions qualify the red-circled part of the diagram? I know that in MOSFETs this part is qualified by Rdson.
1. But in the case of IGBTs, the conductance modulation effect is different from that of MOSFETs, so what is the limitation?
2. Normally it should be divided into FBSOA and RBSOA, why only one SOA chart is given in the manual?
RBSOA personal understanding is mainly to limit the dynamic latch-up effect when the IGBT shutdown and overvoltage due to parasitic inductance, I do not know if this understanding is correct.
3. The shell temperature given in the figure is 25 ℃, I use in the actual working conditions, the expected shell temperature of 100 ℃, in which case the SOA needs to be converted, right, then the RBSOA is not affected by the shell temperature?
Answer the suggestion:
1. Given the definition, what are the causes of this? Elaborate under the following headings
2. Give relevant Infineon product recommendations
3. Can you provide some relevant technical documentation or information?
4. Link to original post on Knowledge: https: //www.zhihu.com/question/508811187
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Show LessI am confusing the simulation results from the IPOSIM. I don't know whether the total loss contains all the power switches in the module or just one switch in the module.
Show LessHi,
I recently purchased the eval kit (EVAL-IHW25N140R5L) to learn more about induction cooking. Can someone point me to the source code for the EVAL Kit (EVAL-IHW25N140R5L)? The kit has two boards: 1) Control Board; 2) User Interface. I am looking for the FW source code for the microcontrollers on each of the boards.
Regards,
ris
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