IGBT Forum Discussions
您好:
现在我们在用贵公司的1ED020I12-F2芯片,但是出现了一个问题,在使用数据手册基本电路图的前提下,该芯片的OUT引脚一直输出低电平,此时/FLT也是低电平。后测量后发现DESAT引脚上有大约0.7V的电压,然后我们给了DESAT一个低电平,此时输出是正常的,/FLT也是高电平,即正常工作。所以请问为什么正常使用DESAT引脚上会有一个0.7左右的电压,而该电压又会导致/FLT输出低电平,导致OUT输出也是低电平?
Show Less您好, (1)目前的驱动芯片:1ED020I12-F2(2A),IGBT模块:FS3L50R07W2H3F_B11(650v,50A)工作环境是直流母线电压在300V,纯阻性负载功率1000w。 (2)但是在300V工作20s后,IGBT烧坏了。损坏情况如图,一共四处。这是因为什么?过压(电压选型的裕度应该够吧),过流?为什么会出现这种情况?会有哪些原因导致? (3)能推荐一下同样的封装的驱动芯片和IGBT吗?或者推荐一个过流值比较大的驱动芯片? 期待您的解答
Show LessIGBT will cut off the high current when shutting down, at this time there will be the overlap of current and voltage to produce large losses; alone look at the voltage and current stress are in line with the specifications under the premise of how to determine whether the loss of shutdown is within the SOA. (Assuming that the duration of the process is very short, that is, the instant of startup)
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Show Less给驱动芯片供电的DC-DC模块正常,IGBT模块是F3L200R12W2H3_B11,驱动芯片选取的是1ED020I12-F2 ,驱动电路如图所示。在上电压为300v的时候,12个驱动芯片坏了9个。后面更换了9个新的驱动芯片以后,上电,给占空比,单个的测G1和E1输出信号,(1)其中有三个只输出是-8V,更换稳压二极管后(如:D7)就可以正常工作了。(2)但是有的无输出,测了驱动芯片的左右侧电路发现,OUT输出电阻断路,有的电阻短路。重新焊接以后发现芯片开始发烫,新焊的电阻开始发黑。(3)还有的是输出在1-2V左右的输出。
请问技术人员,出现以上三种情况是什么原因?为什么-8v是二极管坏了。芯片发烫的原因又是因为什么?发烫的芯片所驱动的管子是T2/T3,T6/T7.都是中间的IGBT,这个是不是IGBT坏了,因为我的直流端口电压在300v,中间IGBT的耐压值是在650v,T1/T4在1200V。
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We're working on several induction systems for integrated use in tanks.
Planning to base the 230V 16A 1-phase designs on the evaluation kits provided, but we also need a 400V 16A 11kW system for use with 1-2 coils (2-4 IGBTs)
Can you please assist in the general components recommended for the EMI filter, bridge rectifier circuits and IGBTs for such a setup?
Should we use one 400V 3-phase bridge per IGBT pair or share it?
Suggested capacitors needed per IGBT pair?
Any pointers in the right direction is appreciated.
Show LessDear community members
I need to measure the temperature of an FF800R12KE7 IGBT with an NTC sensor. I would like to know what is the best position to place the sensor. I tried around it but the temperature varied a lot with the position of the sensor. I plan to place it below the IGBT. But I wouldn't know which side would be better or if the ideal is right in the middle.
Kind regards,
Show LessHi,
Our company recently bought a Hybrid Kit (Kit Hybridpack DSC S2) and we have run into the same issue in this thread https://community.infineon.com/t5/IGBT/Resolver-tracking-error/m-p/652943#M2327 .
It seems that this issue is resolved with a later software release 3.0.8 for the Hybrid Kit. From other threads including https://community.infineon.com/t5/IGBT/Hybrid-kit-software/m-p/614795#M2089 I have seen that I need to be granted the access to see the software for download in the Developer Center.
Could someone please grant me this access?
Many thanks,
Michael
Show LessHydrogen production power supply front-end topology, how do IGBTs work in the DC/DC section, and why use two of them?
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Show LessRecently we need to develop a batch of IGBT devices with high overcurrent capability, but we have some questions about the maximum current limit in datasheet.
I know that the maximum current limit of IGBT is limited by the Latch current (which has been solved by the structure of the device), the bonding wire (about 15mil aluminum wire corresponding to 25A current) and the dissipation power, I guess the Ic, pulse in datasheet is mainly considered the dissipation power, but why is this value generally 3-4 times of the nominal value? In practice, we have found that IGBTs remain undamaged under short-term overcurrent of 5x or even 8x.
Understanding the SOA Curves in the Infineon Discrete IGBT datasheet
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