IGBT Forum Discussions

This is in regards to 1ED3124MC12H (https://www.infineon.com/cms/de/product/power/gate-driver-ics/1ed3124mc12h/)  trying to drive IGBT model FZ900R12KP4HOSA1 (https://www.infineon.com/cms/en/product/power/igbt/igbt-modules/fz900r12kp4/).

I have a few questions specifically about the gate driver:

1. For the IN+ and IN-, I assume that I would need to use a PWM signal to turn on the IGBT? If so, what are the voltage and also the duty cycle percentage parameters for the PWM signal to turn on the IGBT?

2a. IN+ is a non-inverted control signal, and IN- is an inverted control signal. Does this mean IN+ turns ON the IGBT and IN- turns OFF the IGBT?
2b. If yes, does this mean I must send an inverted PWM signal in order to turn off the IGBT after I turned it on?

3. Does IN+ connect to the positive (+) of the PWM module and IN- connect to the negative (-) of the PWM module?

4. Based upon page 8, Figure 6, correct me if I'm wrong but it seems we need 3 voltage supplies?
a. A +3.3V from VCC1 to GND1 (with a 100nF capacitor in-between)
b. A +15V from VCC2 to an independent branch (with a 4 microfarad capacitor in-between)
c. A -8V from the independent branch to VEE2 (with a 4 microfarad capacitor in-between)

5. Is SGND simply the ground for VCC1, separated by a 100nF capacitor? The reason I'm asking is because I've never seen the term "SGND". I'm not sure what the "S" means in "SGND".

Thank You

您好， （1）目前的驱动芯片：1ED020I12-F2（2A），IGBT模块：FS3L50R07W2H3F_B11（650v，50A）工作环境是直流母线电压在300V，纯阻性负载功率1000w。 （2）但是在300V工作20s后，IGBT烧坏了。损坏情况如图，一共四处。这是因为什么？过压（电压选型的裕度应该够吧），过流？为什么会出现这种情况？会有哪些原因导致？ （3）能推荐一下同样的封装的驱动芯片和IGBT吗？或者推荐一个过流值比较大的驱动芯片？ 期待您的解答

We're working on several induction systems for integrated use in tanks.

Planning to base the 230V 16A 1-phase designs on the evaluation kits provided, but we also need a 400V 16A 11kW system for use with 1-2 coils (2-4 IGBTs)

Can you please assist in the general components recommended for the EMI filter, bridge rectifier circuits and IGBTs for such a setup? 

Should we use one 400V 3-phase bridge per IGBT pair or share it? 

Suggested capacitors needed per IGBT pair?

Any pointers in the right direction is appreciated.

smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/IGBT/FS3L40R07W2H5F-B11%E4%B8%AD%E7%9A%84%E7%83%AD%E6%95%8F%E7%94%B5%E9%98%BB%E7%9A%84%E5%9C%B0%E5%92%8C%E5%8A%9F%E7%8E%87%E9%83%A8%E5%88%86M1%E4%B8%AD%E7%9A%84%E5%9C%B0%E5%8F%AF%E4%BB%A5%E4%B8%8D%E5%90%8C%E5%90%97/td-p/744301

This is in regards to 1ED3124MC12H trying to drive IGBT model FZ900R12KP4HOSA1.

All my questions below are in regards to the gate driver.

1. For the IN+ and IN-, I assume that I would need to use a PWM signal to turn on the IGBT? If so, what are the voltage and also the duty cycle percentage parameters for the PWM signal to turn on the IGBT?

2a. IN+ is a non-inverted control signal, and IN- is an inverted control signal. Does this mean IN+ turns ON the IGBT and IN- turns OFF the IGBT?
2b. If yes, does this mean I must send an inverted PWM signal in order to turn off the IGBT after I turned it on?

3. Does IN+ connect to the positive (+) of the PWM module and IN- connect to the negative (-) of the PWM module?

4. Based upon page 8, Figure 6, correct me if I'm wrong but it seems we need 3 voltage supplies?
a. A +3.3V from VCC1 to GND1 (with a 100nF capacitor in-between)
b. A +15V from VCC2 to an independent branch (with a 4 microfarad capacitor in-between)
c. A -8V from the independent branch to VEE2 (with a 4 microfarad capacitor in-between)

5. Is SGND simply the ground for VCC1, separated by a 100nF capacitor? The reason I'm asking is because I've never seen the term "SGND". I'm not sure what the "S" means in "SGND".

hi

工程师

U2 D 和S直接之间的线宽我用的120mil, 四个S我也是用120mil 连接的， 这样对吗？

另外， C11是25V, 连接到D4，我用的20mil, 是对的吗？

期待你的回复

谢谢