IGBT Forum Discussions

Hello everyone, my board needs to use a SmartPIM1 series IGBT module: FP35R12U1T4, according to the SmartPIM1 assembly instructions AN2009_09, PCB boards have a layer of tin after the metalization of the aperture, I would like to ask this layer of tin is plated with the surface treatment using the sinking tin process? It seems that most PCB manufacturers nowadays are spraying tin, and there seems to be only copper on the inside of the holes, will this affect the assembly?

Another problem is that according to the assembly instructions the board needs to be drilled between 1.12mm ~ 1.15mm, I can find the best precision factory crimp hole hole diameter tolerance is also ± 0.05mm, it seems not quite able to meet the error requirements. I would like to ask you to play this kind of board to find what manufacturers to meet the requirements?

您好，各位工程师，我们在测试3KW功率板的时候出现炸机问题，我们猜测是过电压或过电流导致，如何导致的还未确定，请大家能帮忙分析一下。这是什么原因导致的，求解答。

测试环境： 进行电机对拖实验，测试3KW功率板。当测试电机测试到转矩值为95%，NTC温度为100度时，测试电机的功率板发生爆炸。IGBT使用的开关频率是16KHz,母线电压为530V，IGBT是FS35R12W1T7，驱动芯片是IR2214SS，参考的是EVAL-M1-IR2214电路。

下图是损坏的IGBT，六个IGBT都已经损坏变黑，U-H的IGBT中间炸开一个洞，除了V-H的续流二极管损坏，其他续流二极管还是正常的。IGBT的C极与G极未短路。

下图的红色圈子中的是U相的IR2214V，V相的IR2214和W相的IR2214，

黄色圈子中的是下臂的开通、关断、软关断电阻和地上的1R电阻，

绿色圈子中的是上臂的开通、关断、软关断电阻，

蓝色圈子中的是地上打的火光。

下图的红色圈子中的是两个BAT54S-E3-08二极管，

黄色圈子中的是四个BAS16J,115二极管，

绿色圈子中的是U-H、V-H、W-H地上的1R电阻（从右到左）

U相的IR2214的壳体炸开,对应上下臂的BAT54S-E3-08二极管的Pin1出现较为明显的炸开溅射，上下臂地上的1R电阻未损坏。

U-L地下方出现火光，引脚上的锡出现熔化的迹象。

大部分的开通、关断和软关断的电阻损坏阻值变大，Vge之间的10K电阻损坏阻值变小。

四个BAS16J,115二极管都出现损坏，自举电路的二极管也出现损坏。

V相的IR2214的Pin20 HON炸飞，Pin19 Vs烧的发黑，Pin19附近芯片壳体翘起，V-H的220R（软关断电阻）和10R（关断电阻）的电阻表面烧的暗淡变色。

V-H的BAT54S-E3-08二极管的三脚的锡出现熔化，Pin3的壳体出现炸开，V-H地下方出现火光，V-H地上的1R电阻损坏(有灼烧变色的痕迹）。

V-L的BAT54S-E3-08二极管的三脚的锡出现熔化，Pin1翘起，V-L地上的1R电阻未损坏。

V-H的开通、关断和软关断的电阻损坏阻值变大，V-L的开通、关断和软关断的电阻未损坏。

Vge之间的10K电阻损坏阻值变小。

四个BAS16J,115二极管都出现损坏，自举电路的二极管也出现损坏。

W相的IR2214的Pin19 Vs炸飞。

W-H的BAT54S-E3-08二极管的Pin3的壳体被炸开，W-H地上的1R电阻损坏(有灼烧变色的痕迹）。

W-L的BAT54S-E3-08二极管的外壳无明显问题，但是已经损坏，直通，W-L地上的1R电阻未损坏。

大部分的开通、关断和软关断的电阻损坏阻值变大，W-L的Vge之间的10K电阻损坏阻值变小，W-H的Vge之间的10K电阻未损坏。

四个BAS16J,115二极管都出现损坏，自举电路的二极管也出现损坏。

hi

工程师

U2 D 和S直接之间的线宽我用的120mil, 四个S我也是用120mil 连接的， 这样对吗？

另外， C11是25V, 连接到D4，我用的20mil, 是对的吗？

期待你的回复

谢谢

This is in regards to 1ED3124MC12H (https://www.infineon.com/cms/de/product/power/gate-driver-ics/1ed3124mc12h/)  trying to drive IGBT model FZ900R12KP4HOSA1 (https://www.infineon.com/cms/en/product/power/igbt/igbt-modules/fz900r12kp4/).

I have a few questions specifically about the gate driver:

1. For the IN+ and IN-, I assume that I would need to use a PWM signal to turn on the IGBT? If so, what are the voltage and also the duty cycle percentage parameters for the PWM signal to turn on the IGBT?

2a. IN+ is a non-inverted control signal, and IN- is an inverted control signal. Does this mean IN+ turns ON the IGBT and IN- turns OFF the IGBT?
2b. If yes, does this mean I must send an inverted PWM signal in order to turn off the IGBT after I turned it on?

3. Does IN+ connect to the positive (+) of the PWM module and IN- connect to the negative (-) of the PWM module?

4. Based upon page 8, Figure 6, correct me if I'm wrong but it seems we need 3 voltage supplies?
a. A +3.3V from VCC1 to GND1 (with a 100nF capacitor in-between)
b. A +15V from VCC2 to an independent branch (with a 4 microfarad capacitor in-between)
c. A -8V from the independent branch to VEE2 (with a 4 microfarad capacitor in-between)

5. Is SGND simply the ground for VCC1, separated by a 100nF capacitor? The reason I'm asking is because I've never seen the term "SGND". I'm not sure what the "S" means in "SGND".

Thank You

I am working on a wireless charger for electric vehicles and need MOSFET modules for generating the high-frequency AC. The FF3MR20KM1H might fit our application, but I didn't see the forward bias safe operating area plot. 

We'd need to handle about 560A with a pulse width of 10.6uS. 

Can this module handle this?

您好， （1）目前的驱动芯片：1ED020I12-F2（2A），IGBT模块：FS3L50R07W2H3F_B11（650v，50A）工作环境是直流母线电压在300V，纯阻性负载功率1000w。 （2）但是在300V工作20s后，IGBT烧坏了。损坏情况如图，一共四处。这是因为什么？过压（电压选型的裕度应该够吧），过流？为什么会出现这种情况？会有哪些原因导致？ （3）能推荐一下同样的封装的驱动芯片和IGBT吗？或者推荐一个过流值比较大的驱动芯片？ 期待您的解答

We're working on several induction systems for integrated use in tanks.

Planning to base the 230V 16A 1-phase designs on the evaluation kits provided, but we also need a 400V 16A 11kW system for use with 1-2 coils (2-4 IGBTs)

Can you please assist in the general components recommended for the EMI filter, bridge rectifier circuits and IGBTs for such a setup? 

Should we use one 400V 3-phase bridge per IGBT pair or share it? 

Suggested capacitors needed per IGBT pair?

Any pointers in the right direction is appreciated.

smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/IGBT/FS3L40R07W2H5F-B11%E4%B8%AD%E7%9A%84%E7%83%AD%E6%95%8F%E7%94%B5%E9%98%BB%E7%9A%84%E5%9C%B0%E5%92%8C%E5%8A%9F%E7%8E%87%E9%83%A8%E5%88%86M1%E4%B8%AD%E7%9A%84%E5%9C%B0%E5%8F%AF%E4%BB%A5%E4%B8%8D%E5%90%8C%E5%90%97/td-p/744301