IGBT Forum Discussions
smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/IGBT/FS3L40R07W2H5F-B11%E4%B8%AD%E7%9A%84%E7%83%AD%E6%95%8F%E7%94%B5%E9%98%BB%E7%9A%84%E5%9C%B0%E5%92%8C%E5%8A%9F%E7%8E%87%E9%83%A8%E5%88%86M1%E4%B8%AD%E7%9A%84%E5%9C%B0%E5%8F%AF%E4%BB%A5%E4%B8%8D%E5%90%8C%E5%90%97/td-p/744301
Show LessThis is in regards to 1ED3124MC12H trying to drive IGBT model FZ900R12KP4HOSA1.
All my questions below are in regards to the gate driver.
1. For the IN+ and IN-, I assume that I would need to use a PWM signal to turn on the IGBT? If so, what are the voltage and also the duty cycle percentage parameters for the PWM signal to turn on the IGBT?
2a. IN+ is a non-inverted control signal, and IN- is an inverted control signal. Does this mean IN+ turns ON the IGBT and IN- turns OFF the IGBT?
2b. If yes, does this mean I must send an inverted PWM signal in order to turn off the IGBT after I turned it on?
3. Does IN+ connect to the positive (+) of the PWM module and IN- connect to the negative (-) of the PWM module?
4. Based upon page 8, Figure 6, correct me if I'm wrong but it seems we need 3 voltage supplies?
a. A +3.3V from VCC1 to GND1 (with a 100nF capacitor in-between)
b. A +15V from VCC2 to an independent branch (with a 4 microfarad capacitor in-between)
c. A -8V from the independent branch to VEE2 (with a 4 microfarad capacitor in-between)
5. Is SGND simply the ground for VCC1, separated by a 100nF capacitor? The reason I'm asking is because I've never seen the term "SGND". I'm not sure what the "S" means in "SGND".
Show LessThis is in regards to 1ED3124MC12H (https://www.infineon.com/cms/de/product/power/gate-driver-ics/1ed3124mc12h/) trying to drive IGBT model FZ900R12KP4HOSA1 (https://www.infineon.com/cms/en/product/power/igbt/igbt-modules/fz900r12kp4/).
I have a few questions specifically about the gate driver:
1. For the IN+ and IN-, I assume that I would need to use a PWM signal to turn on the IGBT? If so, what are the voltage and also the duty cycle percentage parameters for the PWM signal to turn on the IGBT?
2a. IN+ is a non-inverted control signal, and IN- is an inverted control signal. Does this mean IN+ turns ON the IGBT and IN- turns OFF the IGBT?
2b. If yes, does this mean I must send an inverted PWM signal in order to turn off the IGBT after I turned it on?
3. Does IN+ connect to the positive (+) of the PWM module and IN- connect to the negative (-) of the PWM module?
4. Based upon page 8, Figure 6, correct me if I'm wrong but it seems we need 3 voltage supplies?
a. A +3.3V from VCC1 to GND1 (with a 100nF capacitor in-between)
b. A +15V from VCC2 to an independent branch (with a 4 microfarad capacitor in-between)
c. A -8V from the independent branch to VEE2 (with a 4 microfarad capacitor in-between)
5. Is SGND simply the ground for VCC1, separated by a 100nF capacitor? The reason I'm asking is because I've never seen the term "SGND". I'm not sure what the "S" means in "SGND".
Thank You
Show Less您好, (1)目前的驱动芯片:1ED020I12-F2(2A),IGBT模块:FS3L50R07W2H3F_B11(650v,50A)工作环境是直流母线电压在300V,纯阻性负载功率1000w。 (2)但是在300V工作20s后,IGBT烧坏了。损坏情况如图,一共四处。这是因为什么?过压(电压选型的裕度应该够吧),过流?为什么会出现这种情况?会有哪些原因导致? (3)能推荐一下同样的封装的驱动芯片和IGBT吗?或者推荐一个过流值比较大的驱动芯片? 期待您的解答
Show LessHey guys, the following topology is a DC/AC application, inverter mode simulation, can I use this topology for rectifier mode simulation? How do I parameterize it? Thanks!
smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/IGBT/%E5%8A%9F%E7%8E%87%E4%BB%BF%E7%9C%9F/td-p/743892
Show LessHi
May I know IKCM30F60GD , what is the max output current @80 C.
Thanks
您好:
现在我们在用贵公司的1ED020I12-F2芯片,但是出现了一个问题,在使用数据手册基本电路图的前提下,该芯片的OUT引脚一直输出低电平,此时/FLT也是低电平。后测量后发现DESAT引脚上有大约0.7V的电压,然后我们给了DESAT一个低电平,此时输出是正常的,/FLT也是高电平,即正常工作。所以请问为什么正常使用DESAT引脚上会有一个0.7左右的电压,而该电压又会导致/FLT输出低电平,导致OUT输出也是低电平?
Show LessIGBT will cut off the high current when shutting down, at this time there will be the overlap of current and voltage to produce large losses; alone look at the voltage and current stress are in line with the specifications under the premise of how to determine whether the loss of shutdown is within the SOA. (Assuming that the duration of the process is very short, that is, the instant of startup)
smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/IGBT/IGBT%E5%85%B3%E6%96%AD%E7%9A%84SOA%E7%96%91%E9%97%AE/td-p/741483
Show Less给驱动芯片供电的DC-DC模块正常,IGBT模块是F3L200R12W2H3_B11,驱动芯片选取的是1ED020I12-F2 ,驱动电路如图所示。在上电压为300v的时候,12个驱动芯片坏了9个。后面更换了9个新的驱动芯片以后,上电,给占空比,单个的测G1和E1输出信号,(1)其中有三个只输出是-8V,更换稳压二极管后(如:D7)就可以正常工作了。(2)但是有的无输出,测了驱动芯片的左右侧电路发现,OUT输出电阻断路,有的电阻短路。重新焊接以后发现芯片开始发烫,新焊的电阻开始发黑。(3)还有的是输出在1-2V左右的输出。
请问技术人员,出现以上三种情况是什么原因?为什么-8v是二极管坏了。芯片发烫的原因又是因为什么?发烫的芯片所驱动的管子是T2/T3,T6/T7.都是中间的IGBT,这个是不是IGBT坏了,因为我的直流端口电压在300v,中间IGBT的耐压值是在650v,T1/T4在1200V。
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