Gate Driver ICs Forum Discussions

I had a problem with my student project. In the given circuit I designed a Half Bridge circuit which controlled by 75kHz PWM with MCU. I give complimentary PWM for driving the gate driver. In the start up (potentiometer is at starting position) my code generate PWM as low side is 3.3V and complimentary (high side) is 0V. With increasement of potentiometer duty cycle increase with deadtime about 100ns. But when I give energy to circuit both MOSFETs are initially burn and fuse is blows. I guess MOSFETs are getting conductive at same time but I am sure about control input is stable. I suspect the problem is input filter or Rvs resistor. I don't want to try circuit without being sure because of limited components. What could be the problem?

IR2110  , BSC070N10NS5SC 

Please help me recommend three driver chips for SiC Mosfet: "IMW120R020M1H1", "IMZ120R090M1H", and "IMW65R039M1H".

I consulted the "Infineon EiceDRIVE Gate Driver IC Selection Guide", but could not find any recommended driver chips for these three mosfets.

My MOSFETs are used in a pulse current power supply and do not have any special driving requirements. If possible, please recommend a few more driving chips. Thank you very much.

I have designed a buck-boost circuit with 200kHz PWM, and use the 1ED3122MX12H to drive the IMW120R060M1H. How to choose the dead time of the PWM.Is 100ns suitable?