MOSFET (Si/SiC) Forum Discussions
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Show LessDoes anyone know the reverse recovery time of the IQE006NE2LM5CGSC? The datasheet doesn't show it, is there a#IQE006NE2LM5CGSCny other way to know?
Show LessHello Team
Part Number : IRLML6402TRPBF
I need RoHS, REACH documentation for that part.
I would like to receive a link to receive the materials or a reply by email.
Hello,
I am using SiC MOSFET GDB and power module for double pulse testing. The GDB was working fine until a few days ago when I saw a spark in the HS of the V-phase(I was using the LS of V-phase). After initial inspection of the GDB and power module, the RDY LS, RDY HS LED`s went off on the GDB.
On the power module, the measured impedance between Gate, Drain and Source were very less than the normal impedance on the other phases of the board. The condition on which the failure occurred was 500V and 350A. The SiC module was tested alot of times before the incident and there was no damage. Also the measurement setup was same as the earlier when there was no issue.
Please comment on the possibilities of the failure of the GDB or the power module. If you need more information then please let me know.
Thank you
Show LessI would like to know if the solid state relay RDHA710SE10A2FK can conduct bipolar currents for an AC application.
Any suggestion for a SPICE model is also very welcome.
Show LessHi Sir / Madam
Need your help, regarding part no. IRLI2910PBF, What is prefix Y on the body marking.
Top marking :
Line 1 : IRLI2910
Line 2 : IR logo Y837A
Line 3 : 6453
Regards
Glenn
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When MOSFET driving resistive load current and voltage changes instantaneously but for inductive load why MOSFET voltage VDS gets clamped ??
Hello everyone,
I am seeking out for an information whether X-ray inspection can have an adverse impact on AIKB50N65DF5ATMA1 functionality. I plan to do such inspection on 1000 assemblies but I am not sure if this, can cause any breakdown. I have already studdy IPC-610-H but found nothing helpful. Is tere any maximum of radiation that electonic can survive. Can anyone help me out on this ?
Regards,
Simon
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请问有人知道IQE006NE2LM5CGSC 的反向恢复时间吗? datasheet上面并没有显示,请问有别的方法知道吗
IQE006NE2LM5CGSC
Dear IFXer,
As far as I know, the nonlinear Coss of SJ MOSFET is caused by the depletion region between the p-pillar and the epitaxial n-layer on the drain-source voltage
and would like to know what the nonlinear Coss behavior is in SiC MOSFETs, including both planar and trench of gate structures?
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