MOSFET (Si/SiC) Forum Discussions
在选取IRFB4321PBF和IRFP4568PBF的时候注意到一个问题,一个导通损耗高另一个开关损耗高,在选型的时候怎么样去做这种取舍呢
Hello Team,
We are planning to use the MOSFET IPTG039N15NM5 for one of our applications.
We are using a Photovoltaic MOSFET Driver VOM1271T to drive the MOSFET.
Hence the gate to source voltage will be 8.4V.
Attached is the snippet from the schematic of the same.
Our requirements are.
- Maximum drain voltage = 48V (so the MOSFET shall have a VDS > 60V)
- Low RDSon = as low as possible
- Gate Capacitance = as low as possible (since the output current of the VOM1271T is only 15uA, a high gate capacitance will result in high turn on time).
- Low OFF state capacitance = The drain to source off state capacitance shall be very low else we will get high frequency signals at the output even if the MOSFET is OFF.
- Continuous Drain Current = >150A (The continuous drain current of the MOSFET is marked as 190A in the datasheet.)
So can you please confirm whether a single MOSFET is enough to carry 150A of current.
On our system, the 150A current may last for 5-10 Seconds.
The continuous current will be 90A for all other time.
What are the precautions we need to take for such a high current.
Please confirm whether a single MOSFET is able to carry this much current?.
Looking for your reply.
Hello,
IRFP044NPBF is discontinued, I found IRFP064NPBF, can I use it to replace the IRFP044NPBF ?
My project uses this mosfet as an electronic load for 20V, 3A, 60W max.
Show LessFor MOSFET Loss calculation of inductive load, there are clear methods. But for resistive load, it is rare to see the calculation method. How to calculate the switch time of MOSFET when the load is a resistor?
Show LessHi Infineon friends.
Hello!
Does OptiMOS 5 offer a power cycling curve? (IPT015N10N5)?
Is there a way to determine that the number of cycles corresponding to ∆T has exceeded the part's capacity if it breaks down early in the life test?
Thank you!
Best Regards.
Jay.
smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/MOSFET-Si-SiC/OptiMOS-5-s-power-cycling-curve-IPT015N10N5/td-p/732064
Show LessHi Team,
I am using the part BSS84PH6327XTSA2 with 5V compatible microcontroller. For one of our development project we are migrating to 3.3V operating microcontroller.It is given in the datasheet, that the maximum VGS threshold is -2V.
My microcontoller can source upto 8mA and VOH value will be 2.9V. Can anyone please confirm that the MOSFET can be used at the above specified condition.I am using the FET to drive the optocoupler.
Thanks & Regards
Mahalakshmi
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Does the Rthjc listed in the data sheet refer to the thermal resistance for the top surface or the bottom surface (Drain part)?
I would like to know the thermal resistance values (Typ/Max) of both the top and bottom surfaces.
The device I am considering using is IAUC120N06S5L032 or IAUC60N04S6L039.
Best Regards,
Tetsuo
I built a high-voltage low-power DCDC prototype with symmetrical half-bridge topology using the IMBF170R650M1. Due to the extremely small Id (only 30mA), only the capacitive turn-on loss caused by Coss charging and discharging was taken into account when calculating the loss of the IMBF170R650M1. However, it was found in the experiment that the actual loss value is much larger than the calculated value according to the datasheet.
Please guide me to calculate the loss of IMBF170R650M1 under experimental conditions (100kHz, DC voltage Vds=1000V, drain current Id=30mA, symmetric half bridge topology).
smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/MOSFET-Si-SiC/IMBF170R650M1%E7%9A%84%E7%A9%BA%E8%BD%BD%E6%8D%9F%E8%80%97%E6%B5%8B%E8%AF%95/td-p/732184
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