MOSFET (Si/SiC) Forum Discussions
Are you ready to share your story with the world? Look no further than Deslibris & Amazon Kindle Direct Publishing to streamline your eBook publishing journey! With their user-friendly platforms and extensive support, you can easily convert your manuscript into a professionally published eBook available to millions of readers worldwide. Don't let publishing hurdles hold you back—take advantage of Deslibris & Amazon Kindle Direct Publishing's seamless process and make your publishing dreams a reality today!
Show LessHi all,
I'm looking to implement non-isolated DC/DC using SiC MOSFETs. I've found this driver from INF - 2ED1324S12P, but not sure how can I connect it right to drive a MOSFET with Kelvin source.
I've created a draft schematics, could you please advise if it make sense and if there are any considerations or guidelines for the part (parts shown in grey are optional for surge protection and preventing parasitic turn-on)?
MOSFET I have in mind is IMZ120R090M1H (SiC MOSFET, 90mOhm, 1200V). I checked, it should be enough driving strength for 2ED1324S12P to get it working.
Appreciate your help,
Ilya
Show Less
Help!
Customer said my label is not original. Please help to verify. Thank you!
smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/MOSFET-Si-SiC/IRFR9024NTRPBF-label-question/td-p/723829
Show LessI would like to build the MOSFET's two-resistance model for thermal simulation. Basically, we need the power dispation,Theta JC, Theta-JB.
1. How could we understand the thermal resistance under Q1, Q2? For thermal simulation, could we use the bigger data for worst case consideration?
2. For the mentioned "junction-case" in your file, does the "case" mean the top case (away the board )or bottom case(near the board)?
3. We need thermal resistance for both junction-case and junction- board. Could you help provide it?
4. For the power data, there are two datas in your file based on different PCB design. Does it mean that the better PCB thermal design, the lower power dispation?
Show Less
1. When evaluating applications using SOA diagrams for MOSFETs, is the evaluation done using SOA curve diagrams for Tc &Rjc conditions or for Ta &Rja conditions.
2. Does this ID pulse value in the specification have anything to do with the pulse width time? Or does it mean that this value cannot be exceeded for all single pulse current peaks, regardless of the pulse width time?
smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/MOSFET-Si-SiC/MOSFET-SOA%E5%8C%BA%E8%AF%84%E4%BC%B0%E9%97%AE%E9%A2%98/td-p/723975
Show LessDear sir,
Customers are currently seeking IPW65R050CFD7A test V (BR) DSS method, but also help to provide the specific test procedures, as well as how to define the test Id value is selected!
smartconx_target@Q!w2e3r4t5y6u7i8o9p0||/t5/MOSFET-Si-SiC/IPW65R050CFD7A-%E6%B5%8B%E8%AF%95V-BR-DSS%E6%96%B9%E6%B3%95%E6%AD%A5%E9%AA%A4%E5%8F%8A%E6%B5%8B%E8%AF%95Id%E6%98%AF%E5%A6%82%E4%BD%95%E5%AE%9A%E4%B9%89%E9%80%89%E5%8F%96/td-p/721305
Show LessHi everyone, I've been facing an issue in my MOSFET section. My input supply is 12V, but the output I'm getting is only 10V. There's a drop of around 2V across the source and drain, even under no-load conditions. I'm using the IAUA250N04S6N006 MOSFET with a gate voltage of 12V. I don't know why the voltage drop occurs in a no-load condition. I have attached mty schematics below Could anyone able to help me? Thanks in advance.
Show Less
Hello
My customer intends to use BTS428L2 for high side switching, but they have a question.
Question from Customer
--------
“ Can I have Nominal load current at Tc=60deg-C?( not 85deg-V) ”
-------
To answer it, I refer to the Application note “ Smart High-side Switches", and I ‘ve found the Fig36 Tj vs Rdson.
I had read Coeff. From Fig36 roughly, and I calculate as followings.
Is this wrong? Otherwise, would you please advice how to estimate
Nominal load current at Tc=60deg-C?
In case
TC=25℃ Coeff ≒50=>100 =5.8A/(100/142)= 8.23A
Tc=85℃ Coeff ≒71=>142=5.8A/(142/142)=5.8A
Tc=60 ℃ Coeff:≒61=>122=5.8A/(122/142)=6.75A
Thank you for your cooperation.
Best Regards
Show Less
Hello
Would you please let us know the tool ( simulation tool or spread sheet) for SiC power dissipation estimation?
My customer want to calculate it, but don't know the good way.
*Single phase Full Bridge; hard switching
*DC link:400V
*switching frequency 35kHz
* Id=20A
*Load (TBD; but inductive load ( Ultra sonic equipment))
I had looking for IPOSIM, Infineon Designer but I could not good tool.
I have to calculate conduction loss, driving loss, and switching loss by myself ( define load is resistive)... ?
Best Regards
Show Less
Hello,
I am using SiC MOSFET GDB and power module for double pulse testing. The GDB was working fine until a few days ago when I saw a spark in the HS of the V-phase(I was using the LS of V-phase). After initial inspection of the GDB and power module, the RDY LS, RDY HS LED`s went off on the GDB.
On the power module, the measured impedance between Gate, Drain and Source were very less than the normal impedance on the other phases of the board. The condition on which the failure occurred was 500V and 350A. The SiC module was tested alot of times before the incident and there was no damage. Also the measurement setup was same as the earlier when there was no issue.
Please comment on the possibilities of the failure of the GDB or the power module. If you need more information then please let me know.
Thank you
Show Less